Transferable and flexible resistive switching memory devices based on PMMA films with embedded Fe3O4 nanoparticles-Reference-Cited by-同舟云学术

Transferable and flexible resistive switching memory devices based on PMMA films with embedded Fe3O4 nanoparticles

Published:2017-05-08 Issue:19 Volume:110 Page:193503
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Lin Y.¹,Xu H. Y.¹^ORCID,Wang Z. Q.¹,Cong T.¹,Liu W. Z.¹,Ma H. L.¹,Liu Y. C.¹

Affiliation:

1. Key Laboratory for UV Light-Emitting Materials and Technology (Northeast Normal University), Ministry of Education, 5268 Renmin Street, Changchun 130024, China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4983382

Reference35 articles.

1. Out-of-Plane Strain Effects on Physically Flexible FinFET CMOS

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3. Thin PZT-Based Ferroelectric Capacitors on Flexible Silicon for Nonvolatile Memory Applications

4. Towards neuromorphic electronics: Memristors on foldable silicon fabric

5. Fabrication of Nanowire Electronics on Nonconventional Substrates by Water-Assisted Transfer Printing Method

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