Heterostructures in GaInP grown using a change in Te doping
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.373453
Reference27 articles.
1. Control and characterization of ordering in GaInP
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3. Proposal for III‐V ordered alloys with infrared band gaps
4. Disorder/order/disorder Ga0.5In0.5P visible light‐emitting diodes
5. 29.5%‐efficient GaInP/GaAs tandem solar cells
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1. Atomic arrangements of a CuAu-I type ordered structure in strained InxGa1 − xAs/InyAl1 − yAs multiple quantum wells;Journal of Materials Science;2005-07
2. Determination of ordering effects on GaInP pressure coefficients;physica status solidi (b);2004-11
3. Measurement of conduction band minima in ordered and disordered GaInP;Journal of Crystal Growth;2004-08
4. Isoelectronic surfactant-induced surface step structure and correlation with ordering in GaInP;Journal of Crystal Growth;2002-02
5. Existence of a CuAu–I-type ordered structure in lattice-mismatched InxGa1−xAs/InyAl1−yAs multiple quantum wells;Journal of Applied Physics;2001-02-15
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