Carrier heating and spectral hole burning in strained‐layer quantum‐well laser amplifiers at 1.5 μm
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.108486
Reference12 articles.
1. High quantum efficiency, high power, modulation doped GaInAs strained-layer quantum well laser diodes emitting at 1.5 μm
2. Low threshold highly efficient strained quantum well lasers at 1.5 micrometre wavelength
3. Gain spectra and gain compression of strained‐layer multiple quantum well optical amplifiers
4. Effect of strain on the resonant frequency and damping factor in InGaAs/InP multiple quantum well lasers
5. Dependence of polarization, gain, linewidth enhancement factor, and K factor on the sign of the strain of InGaAs/InP strained‐layer multiquantum well lasers
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