Intrinsic photoluminescence of M-plane GaN films on LiAlO2 substrates
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2710355
Reference20 articles.
1. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
2. Strained M-plane GaN for the realization of polarization-sensitive photodetectors
3. Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak
4. Polarization-sensitive ultraviolet photodetectors based on M-plane GaN grown on LiAlO2 substrates
5. The Blue Laser Diode
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1. Raman Gain in Tellurite Glass: How Combination of IR, Raman, Hyper-Raman and Hyper-Rayleigh Brings New Understandings;The Journal of Physical Chemistry C;2016-09-29
2. Excitation polarization anisotropy of the spontaneous emission from anM-plane GaN film: Competition between hole relaxation and exciton recombination;Physical Review B;2013-04-29
3. Impact of light polarization on photoluminescence intensity and quantum efficiency in AlGaN and AlInGaN layers;Applied Physics Letters;2012-12-10
4. Characterization of -plane GaN thin film grown on pre-annealing β-LiGaO2 (100) substrate;Thin Solid Films;2012-12
5. Anisotropy of free-carrier absorption and diffusivity in m-plane GaN;Applied Physics Letters;2012-01-09
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