Increased critical thickness for high Ge-content strained SiGe-on-Si using selective epitaxial growth
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3530433
Reference15 articles.
1. Continuous MOSFET performance increase with device scaling: The role of strain and channel material innovations
2. Hole mobility enhancements in strained Si/Si1−yGey p-type metal-oxide-semiconductor field-effect transistors grown on relaxed Si1−xGex (x
3. Strain relaxation kinetics in Si1−xGex/Si heterostructures
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