Field‐effect conductance activation energy in an undoped polycrystalline silicon thin‐film transistor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.106010
Reference13 articles.
1. High‐performance thin‐film transistors from optimized polycrystalline silicon films
2. Material properties and characteristics of polysilicon transistors for large area electronics
3. Low defect-density polycrystalline silicon for high performance thin film transistors
4. Determination of gap state density in polycrystalline silicon by field‐effect conductance
5. Field-effect analysis for the determination of gap-state density and Fermi-level temperature dependence in polycrystalline silicon
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