Systematic studies of the photoluminescence of Ge quantum dots grown on strained Si0.7Ge0.3 buffer layer
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2901873
Reference15 articles.
1. Anomalous photoluminescence behavior from amorphous Ge quantum dots produced by buffer-layer-assisted growth
2. Photoluminescence investigation of phononless radiative recombination and thermal-stability of germanium hut clusters on silicon(001)
3. Photoluminescence of Ge∕Si structures grown on oxidized Si surfaces
4. Growth and photoluminescence of self-assembled islands obtained during the deposition of Ge on a strained SiGe layer
5. Effect of self-patterned Si[sub 1−x]Ge[sub x] template layer on the structural and optical properties of Ge dots
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