Quantitative relationship between interfacial misfit and in-plane grain size of ZnO film-Reference-Cited by-同舟云学术

Quantitative relationship between interfacial misfit and in-plane grain size of ZnO film

Published:2014-12-28 Issue:24 Volume:116 Page:244302
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Cao Shan Peng¹^ORCID,Ye Fei¹,Xu Ai Yan¹,Zhang Xiang Yu¹,Bai Fei Ming²

Affiliation:

1. Key Laboratory of Materials Modification by Laser, Ion, and Electron Beams (Ministry of Education), School of Materials Science and Engineering, Dalian University of Technology, Dalian 116024, China

2. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

Funder

National Natural Science Foundation of China (NSFC)

Natural Science Foundation of Liaoning Province (Liaoning Natural Science Foundation)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4904855

Reference19 articles.

1. Optical properties of sputter‐deposited ZnO:Al thin films

2. Optical properties of the ZnO nanotubes synthesized via vapor phase growth

3. Transparent conducting aluminum-doped zinc oxide thin films for organic light-emitting devices

4. Morphology, electrical and optical properties of undoped ZnO layers deposited on silicon substrates by PEMOCVD

5. Interfacial misfit of zinc oxide films deposited on Si (100), (110) and (111) substrates

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