Self-trapping in bismuth-based semiconductors: Opportunities and challenges from optoelectronic devices to quantum technologies-Reference-Cited by-同舟云学术

Self-trapping in bismuth-based semiconductors: Opportunities and challenges from optoelectronic devices to quantum technologies

Published:2021-11-29 Issue:22 Volume:119 Page:220501
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Rondiya Sachin R.¹^ORCID,Jagt Robert A.²^ORCID,MacManus-Driscoll Judith L.²^ORCID,Walsh Aron¹³^ORCID,Hoye Robert L. Z.¹^ORCID

Affiliation:

1. Department of Materials, Imperial College London, Exhibition Road, London SW7 2AZ, United Kingdom

2. Department of Materials Science and Metallurgy, University of Cambridge, 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom

3. Department of Materials Science and Engineering, Yonsei University, Seoul 120-749, South Korea

Funder

Engineering and Physical Sciences Research Council

Royal Academy of Engineering

Bill Welland

Winton Programme for the Physics of Sustainability

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0071763

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5. Biological impact of lead from halide perovskites reveals the risk of introducing a safe threshold

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