Analysis of high reverse currents of 4H-SiC Schottky-barrier diodes
Author:
Affiliation:
1. Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-koigakubo, Kokubunji-shi, Tokyo 185-8601, Japan
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5009344
Reference55 articles.
1. Evaluation of a 1200-V, 800-A All-SiC Dual Module
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4. Schottky Barriers for Pt, Mo and Ti on 6H and 4H SiC (0001), (000-1), (1-100) and (1-210) Faces Measured by I-V, C-V and Internal Photoemission
5. Control of interface states at metal/6H-SiC(0001) interfaces
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