A measurement of a minority‐carrier lifetime in ap‐type silicon wafer by a two‐mercury probe method
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343685
Reference16 articles.
1. Phase Shift Method of Carrier Lifetime Measurements in Semiconductors
2. Interpretation of surface and bulk effects using the pulsed MIS capacitor
3. Minority-carrier lifetime measurements on silicon solar cells using Iscand Voctransient decay
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