Copper barrier properties of a low-dielectric-constant organocyclosiloxane prepared by plasma-enhanced polymerization
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2735952
Reference15 articles.
1. Diffusion barrier integrity and electrical performance of Cu/porous dielectric damascene lines
2. Correlation between barrier integrity and TDDB performance of copper porous low-k interconnects
3. Plasma-Enhanced-Polymerization Thin-Film as a Drift Barrier for Cu Ions
4. Kinetics of copper drift in low-κ polymer interlevel dielectrics
5. Highly thermal-stable, plasma-polymerized BCB polymer film
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1. Dielectric Barrier, Etch Stop, and Metal Capping Materials for State of the Art and beyond Metal Interconnects;ECS Journal of Solid State Science and Technology;2014-10-14
2. Effect of Phosphorus Atom in Self-Assembled Monolayer as a Drift Barrier for Advanced Copper Interconnects;Applied Physics Express;2008-06-06
3. Instability of Metal Barrier with Porous Methyl Silsesquioxane Films;Journal of The Electrochemical Society;2008
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