The effects of nickel germanosilicide contacts on the biaxial compressive stress in thin epitaxial silicon-germanium alloys on silicon
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2795346
Reference15 articles.
1. A Logic Nanotechnology Featuring Strained-Silicon
2. Nickel Germanosilicide Contacts Formed on Heavily Boron Doped<tex>$rm Si_1-xrm Ge_x$</tex>Source/Drain Junctions for Nanoscale CMOS
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