Carrier recombination dynamics in Si doped InN thin films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3607271
Reference24 articles.
1. When group-III nitrides go infrared: New properties and perspectives
2. Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system
3. Recombination mechanism of photoluminescence in InN epilayers
4. RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys
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1. Towards the indium nitride laser: obtaining infrared stimulated emission from planar monocrystalline InN structures;Scientific Reports;2018-06-21
2. New photoelectrical properties of InN: Interband spectra and fast kinetics of positive and negative photoconductivity of InN;Journal of Applied Physics;2018-05-21
3. Carrier recombination dynamics in electronically coupled multi-layer InAs/GaAs quantum dots;Journal of Luminescence;2018-03
4. Dominant near infrared light-emitting diodes based on p-NiO/n-InN heterostructure on SiC substrate;Journal of Alloys and Compounds;2018-02
5. Near infrared electroluminescence from p-NiO/n-InN/n-GaN light-emitting diode fabricated by PAMBE;Journal of Luminescence;2017-06
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