Correlation between threshold voltage and channel dopant concentration in negative-type metal-oxide-semiconductor field-effect transistors studied by atom probe tomography-Reference-Cited by-同舟云学术

Correlation between threshold voltage and channel dopant concentration in negative-type metal-oxide-semiconductor field-effect transistors studied by atom probe tomography

Published:2012-06-18 Issue:25 Volume:100 Page:253504
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Takamizawa H.,Shimizu Y.,Inoue K.,Toyama T.,Yano F.,Nishida A.,Mogami T.,Okada N.,Kato M.,Uchida H.,Kitamoto K.,Miyagi T.,Kato J.,Nagai Y.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4730437

Reference23 articles.

1. Experimental study of threshold voltage fluctuation due to statistical variation of channel dopant number in MOSFET's

2. Modeling statistical dopant fluctuations in MOS transistors

3. Suppression of random dopant-induced threshold voltage fluctuations in sub-0.1-μm MOSFET's with epitaxial and δ-doped channels

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