Characterization of Ga out‐diffusion from GaAs into SiOxNyfilms during thermal annealing
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.343603
Reference8 articles.
1. SiOxNycapped annealing for Si‐implanted GaAs
2. Nonalloyed ohmic contacts to Si‐implanted GaAs activated using SiOxNycapped infrared rapid thermal annealing
3. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
4. On the determination of the spatial distribution of deep centers in semiconducting thin films from capacitance transient spectroscopy
5. Electron traps in bulk and epitaxial GaAs crystals
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