Effect of Ge doping on growth stress and conductivity in AlxGa1-xN-Reference-Cited by-同舟云学术

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Effect of Ge doping on growth stress and conductivity in AlxGa1-xN

Published:2019-04-08 Issue:14 Volume:114 Page:142101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Bansal Anushka¹,Wang Ke²,Lundh James Spencer³,Choi Sukwon³,Redwing Joan M.¹^ORCID

Affiliation:

1. Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA

2. Materials Characterization Laboratory, Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802, USA

3. Department of Mechanical Engineering, The Pennsylvania State University, University Park, Pennsylvania 16802, USA

Funder

National Science Foundation

Air Force Office of Scientific Research

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/1.5080680

Reference34 articles.

1. Effect of Si doping on strain, cracking, and microstructure in GaN thin films grown by metalorganic chemical vapor deposition

2. Strain in Si doped GaN and the Fermi level effect

3. Ge doped GaN with controllable high carrier concentration for plasmonic applications

4. Hybrid functional calculations ofDXcenters in AlN and GaN

5. Germanium - the superior dopant in n-type GaN

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Wide and ultrawide-bandgap semiconductor surfaces: A full multiscale model;Applied Surface Science;2024-10

2. High conductivity in Ge-doped AlN achieved by a non-equilibrium process;Applied Physics Letters;2023-04-03

3. Effects of Pre-Metallization on the MOCVD Growth and Properties of Ge-doped AlGaN on AlN/Sapphire Templates;Journal of Electronic Materials;2022-12-12

4. High electron mobility in AlN:Si by point and extended defect management;Journal of Applied Physics;2022-11-14

5. Correlation between electrical properties and growth dynamics for Si-doped Al-rich AlGaN grown by metal-organic chemical vapor deposition;Micro and Nanostructures;2022-03

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