Electroluminescence of type II broken-gap p-Ga0.84In0.16As0.22Sb0.78∕p-InAs heterostructures with a high-mobility electron channel at the interface
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2103408
Reference20 articles.
1. GaSb-related materials for TPV cells
2. The growth and characterization of GaInAsSb and AlGaAsSb on GaSb by metal-organic chemical vapor deposition
3. High-temperature performance in ∼4 μm type-II quantum well lasers with increased strain
4. Mid-infrared lasing from self-consistent quantum wells at a type II single broken-gap heterointerface
5. Interface-induced optical and transport phenomena in type II broken-gap single heterojunctions
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