Oxygen vacancy defects in Ta2O5 showing long-range atomic re-arrangements
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4869553
Reference41 articles.
1. Tantalum pentoxide (Ta2O5) thin films for advanced dielectric applications
2. Enhancement of the dielectric constant of Ta2O5through substitution with TiO2
3. Defect dominated charge transport in amorphous Ta2O5 thin films
4. Challenges of Ta2O5 as high-k dielectric for nanoscale DRAMs
5. High dielectric constant gate oxides for metal oxide Si transistors
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