Photoluminescence topographic observation of defects in silicon crystals
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.90439
Reference11 articles.
1. A Simple Method for Obtaining Luminescent Pattern of Double Heterostructure Crystals
2. Degradation characteristics of cw optically pumped AlxGa1−xAs heterostructure lasers
3. Degradation sources in GaAs-AlGaAs double-heterostructure lasers
4. X‐ray topographic study of dark‐spot defects in GaAs‐Ga1−xAlxAs double‐heterostructure wafers
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4. Interface Recombination Velocity at the Si/SiO2 Interface Determined from Bias-Dependent Photoluminescence;Physica Status Solidi (a);1991-01-16
5. Chapter 3 Structure and Characterization of Strained-Layer Superlattices;Strained-Layer Superlattices: Materials Science and Technology;1990
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