Substrate removal for high quantum efficiency back side illuminated type-II InAs∕GaSb photodetectors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2821834
Reference11 articles.
1. A new semiconductor superlattice
2. Growth of InAs/GaSb short-period superlattices for high-resolution mid-wavelength infrared focal plane array detectors
3. Infrared detectors and lasers operating in the 3-12 μm range using band-gap engineered structures with type II band-gap alignment
4. Type-II superlattice photodetectors for MWIR to VLWIR focal plane arrays
5. 320 × 256 infrared focal plane array based on type-II InAs/GaSb superlattice with a 12-μm cutoff wavelength
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