Intrinsic strain in SiO2 thin films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.366759
Reference21 articles.
1. Mechanisms for the oxidation of silicon and the formation of charged defects
2. Si→SiO2transformation: Interfacial structure and mechanism
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4. Analysis and application of a viscoelastic model for silicon oxidation
5. Stress in thermal SiO2during growth
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