Interaction between the divacancy and hydrogen in silicon: Observation of fast and slow kinetics
Author:
Affiliation:
1. University of Oslo, Department of Physics, Center for Materials Science and Nanotechnology, P.O. Box 1048, Blindern, Oslo, Norway
Funder
The Centre for Environment-friendly Energy Research
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5037310
Reference31 articles.
1. Defects in Irradiated Silicon: Electron Paramagnetic Resonance of the Divacancy
2. Divacancy annealing in Si: Influence of hydrogen
3. Electron paramagnetic resonance study of hydrogen-vacancy defects in crystalline silicon
4. Electronic structure of divacancy–hydrogen complexes in silicon
5. Divacancy acceptor levels in ion-irradiated silicon
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Multistability of isolated and hydrogenated Ga–O divacancies in β−Ga2O3;Physical Review Materials;2021-02-03
2. Generation and metastability of deep level states in β-Ga2O3 exposed to reverse bias at elevated temperatures;Journal of Applied Physics;2019-05-14
3. Correlated annealing and formation of vacancy-hydrogen related complexes in silicon;Journal of Physics: Condensed Matter;2019-04-01
4. Interaction Between Hydrogen and Vacancy Defects in Crystalline Silicon;physica status solidi (a);2018-12-11
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