High power GaAs∕AlGaAs lasers (λ∼850nm) with ultranarrow vertical beam divergence-Reference-Cited by-同舟云学术

High power GaAs∕AlGaAs lasers (λ∼850nm) with ultranarrow vertical beam divergence

Published:2006-12-04 Issue:23 Volume:89 Page:231114
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Karachinsky L. Ya.,Novikov I. I.,Shernyakov Yu. M.,Kuznetsov S. M.,Gordeev N. Yu.,Maximov M. V.,Kop’ev P. S.,Ben-Ami U.,Arbiv D. B.,Sharon A.,Kettler T.,Posilovic K.,Schulz O.,Shchukin V. A.,Pohl U. W.,Ledentsov N. N.,Bimberg D.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2403906

Reference16 articles.

1. High-power operation of broad-area laser diodes with GaAs and AlGaAs single quantum wells for Nd:YAG laser pumping

2. High-power laser diodes (λ = 808–850 nm) based on asymmetric separate-confinement heterostructures

3. High-power 808 nm lasers with a super-large optical cavity

4. 650-nm lasers with narrow far-field divergence with integrated optical mode expansion layers

5. 660-nm GaInP-AlGaInP quantum-well laser diode structures with reduced vertical beam divergence angle

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