Optical properties of Ga1−xInxP1−ySbyalloys grown by organometallic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346313
Reference29 articles.
1. MOVPE growth of GaInAsSb
2. Organometallic vapor‐phase epitaxial growth and characterization of the metastable alloy InP1−xSbx
3. Organometallic vapor phase epitaxial growth of a new semiconductor alloy: GaP1−xSbx
4. Calculation of energy band gaps in quaternary iii/v alloys
5. Luminescence in Solids
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1. Structure and morphology of GaInAsP solid solutions on GaAs substrates grown by pulsed laser deposition;Thin Solid Films;2022-02
2. Domains of molecular beam epitaxial growth of Ga(In)AsBi on GaAs and InP substrates;Journal of Crystal Growth;2016-02
3. $\hbox{In}_{0.46}\hbox{Ga}_{0.54}\hbox{P}_{0.98} \hbox{Sb}_{0.02}/\hbox{GaAs}$: Its Band Offset and Application to Heterojunction Bipolar Transistor;IEEE Electron Device Letters;2010-05
4. Growth of various antimony-containing alloys by MOVPE;Journal of Crystal Growth;2008-11
5. Spectroscopic study of surfactant enhanced organometallic vapor phase epitaxy growth of GaInP;Journal of Applied Physics;2001-07-15
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