Lattice site location of optical centers in GaN:Eu light emitting diode material grown by organometallic vapor phase epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3489103
Reference16 articles.
1. Visible cathodoluminescence of GaN doped with Dy, Er, and Tm
2. Photoluminescence and lattice location of Eu and Pr implanted GaN samples
3. Rare-earth-doped GaN: growth, properties, and fabrication of electroluminescent devices
4. Red emission from Eu-doped GaN luminescent films grown by metalorganic chemical vapor deposition
5. Study of GaN:Eu[sup 3+] Thin Films Deposited by Metallorganic Vapor-Phase Epitaxy
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