Comparison of buried oxide in silicon by oxygen implantation made by wafer and beam scanning
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.96691
Reference10 articles.
1. A Review of Silicon-On-Insulator Formation by Oxygen Ion Implantation
2. Silicon‐on‐insulator by oxygen implantation with a stationary beam
3. Microstructure of silicon implanted with high dose oxygen ions
4. Silicon on insulator structures formed by the implantation of high doses of reactive ions
5. Buried Oxide in Silicon by Oxygen Implantation Into Scanned Wafers
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Electron spin resonance characterization and localization of a thermally generated donor inherent to the separation by implantation of oxygen process;Journal of Applied Physics;1993-01-15
2. Low‐temperature properties and phototransport in silicon‐on‐insulator films synthesized by oxygen implantation;Journal of Applied Physics;1988-05
3. The Effect of Beam Current on the Crystal Quality of the Residual Silicon Layer in Buried Nitride Structure Formed by Nitrogen Implantation with a Stationary Beam;Journal of The Electrochemical Society;1987-12-01
4. Effective removal of oxygen from Si layer on buried oxide by implantation of hydrogen;Journal of Applied Physics;1987-09-15
5. Electron spin resonance studies on buried oxide silicon‐on‐insulator;Applied Physics Letters;1987-02-02
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