MBE-grown 232–270 nm deep-UV LEDs using monolayer thin binary GaN/AlN quantum heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4975068
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1. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres
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3. Improved Efficiency of 255–280 nm AlGaN-Based Light-Emitting Diodes
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