In0.35Ga0.65P light‐emitting diodes grown by gas‐source molecular beam epitaxy
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.107668
Reference11 articles.
1. Short-wavelength InGaAlP visible laser diodes
2. Band-Gap Energy Anomaly and Sublattice Ordering in GaInP and AlGaInP Grown by Metalorganic Vapor Phase Epitaxy
3. Growth temperature dependent atomic arrangements and their role on band-gap of InGaAlP alloys grown by MOCVD
4. Gas-source molecular-beam epitaxy growth of InxGa1−x−yAlyP
5. Exciton absorption, photoluminescence and band structure of N-Free and N-DOPED In1−xGaxP
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1. Organic light-emitting diodes based on layered films of thiophene/phenylene co-oligomers;Journal of Non-Crystalline Solids;2012-09
2. Chapter 5 AlGalnP Light-Emitting Diodes;Semiconductors and Semimetals;1997
3. Liquid‐phase epitaxial growth and characterization of InGaAsP layers grown on GaAsP substrates for application to orange light‐emitting diodes;Journal of Applied Physics;1995-01-15
4. Growth and characterization of Ga0.65In0.35P orange light‐emitting diodes by metalorganic vapor–phase epitaxy;Journal of Applied Physics;1993-08
5. Gas‐source molecular beam epitaxial growth, characterization, and light‐emitting diode application of InxGa1−xP on GaP(100);Applied Physics Letters;1993-05-10
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