Thickness dependence of room temperature ferromagnetism observed in Fe-doped NiO thin films
Author:
Funder
NSF
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4865555
Reference23 articles.
1. Potential for spin-based information processing in a thin-film molecular semiconductor
2. Silicon spintronics
3. Ultrathin oxide films and interfaces for electronics and spintronics
4. Tunable Ferromagnetic Behaviors Observed in Highly Orientated Co-Doped ZnO Thin Films by the Bandgap Engineering
5. Grain boundaries as the controlling factor for the ferromagnetic behaviour of Co-doped ZnO
Cited by 7 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Evaluation of ferric ion molar concentration effect on morphological and opto-electrochemical properties of FexNi1-xO composite thin films;Materials Chemistry and Physics;2023-10
2. Significant improvement in the structural, microstructural, and room-temperature magnetic properties of Fe-doped NiO nanoparticles prepared by the solution combustion method;Journal of Materials Science: Materials in Electronics;2022-09-15
3. Qualitative Analysis of the Valence and Conduction Band Offset Parameters in FeNiO/CuNiO Bilayer Film Using X‐Ray Photoelectron Spectroscopy;physica status solidi (b);2021-11-17
4. Modifying the crystal structures of Fe2O3-doped NiO epitaxial thin films grown at room temperature by controlling the oxygen partial pressure;Applied Surface Science;2020-12
5. Tuning of structural, optical band gap, and electrical properties of room-temperature-grown epitaxial thin films through the Fe2O3:NiO ratio;Scientific Reports;2019-03-13
1.学者识别学者识别
2.学术分析学术分析
3.人才评估人才评估
"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370
www.globalauthorid.com
TOP
Copyright © 2019-2024 北京同舟云网络信息技术有限公司 京公网安备11010802033243号 京ICP备18003416号-3