Monolayer 1T-LaN2: Dirac spin-gapless semiconductor of p-state and Chern insulator with a high Chern number-Reference-Cited by-同舟云学术

Monolayer 1T-LaN2: Dirac spin-gapless semiconductor of p-state and Chern insulator with a high Chern number

Author:

Li Linyang¹²^ORCID,Kong Xiangru³^ORCID,Chen Xin⁴^ORCID,Li Jia¹^ORCID,Sanyal Biplab⁴^ORCID,Peeters François M.²⁵^ORCID

Affiliation:

1. School of Science, Hebei University of Technology, Tianjin 300401, China

2. Department of Physics, University of Antwerp, Groenenborgerlaan 171, B-2020 Antwerp, Belgium

3. Center for Nanophase Materials Sciences, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA

4. Department of Physics and Astronomy, Uppsala University, SE-75120 Uppsala, Sweden

5. Department of Physics and Astronomy, Key Laboratory of Quantum Information of Yunnan Province, Yunnan University, Kunming 650091, China

Funder

FLAG-ERA project TRANS2DTMD

Swedish Research Council project grant

Swdeish Research Links program grant

Natural Science Foundation of Hebei Province

China Scholarship Council

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

Reference68 articles.

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