Photoluminescence of metalorganic-chemical-vapor-deposition-grown GaInNAs/GaAs single quantum wells
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1540731
Reference15 articles.
1. GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
2. Low threshold 1.2 μm InGaAs quantum well lasers grown under low As/III ratio
3. Organometallic vapor phase epitaxy growth and optical characteristics of almost 1.2 μm GaInNAs three-quantum-well laser diodes
4. Effects of rapid thermal annealing on strain-compensated GaInNAs/GaAsP quantum well structures and lasers
5. Comparison of radiative properties of InAs quantum dots and GaInNAs quantum wells emitting around 1.3 μm
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1. High-quality 1.3 μm-wavelength GaInAsN/GaAs quantum wells grown by metalorganic vapor phase epitaxy on vicinal substrates;Applied Physics Letters;2011-08-15
2. Effect of excitation intensity on fluorescence spectra in ZnO nanostructures and its origin;Science in China Series G: Physics, Mechanics and Astronomy;2009-01
3. Photoluminescence and modulation spectroscopy study of the effects of growth interruptions on the interfaces of GaAsSb/GaAs multiple quantum wells;physica status solidi (a);2007-02
4. Temperature dependent photoreflectance and photoluminescence characterization of GaInNAs∕GaAs single quantum well structures;Journal of Applied Physics;2004-12
5. Determination of the carrier concentration in InGaAsN∕GaAs single quantum wells using Raman scattering;Applied Physics Letters;2004-11-22
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