Application of selective removal of mesa sidewalls for high-breakdown and high-linearity Ga0.51In0.49P/In0.15Ga0.85As pseudomorphic transistors
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123785
Reference8 articles.
1. Breakdown voltage improvement in strained InGaAlAs/GaAs FETs
2. Enhancement-mode buried gate InGaP/AlGaAs/InGaAs heterojunction FETs fabricated by selective wet etching
3. Device linearity comparisons between doped-channel and modulation-doped designs in pseudomorphic Al/sub 0.3/Ga/sub 0.7/As/In/sub 0.2/Ga/sub 0.8/As heterostructures
4. Ga/sub 0.51/In/sub 0.49/P/In/sub 0.15/Ga/sub 0.85/As/GaAs pseudomorphic doped-channel FET with high-current density and high-breakdown voltage
5. Improved breakdown in LP-MOCVD grown n+-GaAs/(P+)-GaInP/n-GaAs heterojunction camel-gate FET
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2. Electronic structure, optical and dielectric constant of compounds Indium-based: InAlP2, and InGaP2 in its chalcopyrite, CuPt and CuAu-I structures;Materials Science in Semiconductor Processing;2013-12
3. Device linearity improvement of In0.49Ga0.51P/In0.15Ga0.85As doped-channel FETs with a metal plug alloy process;Semiconductor Science and Technology;2008-02-07
4. Three-terminal-controlled resistor-type hydrogen sensor;Electronics Letters;2006
5. Device performance improvement of InGaP/InGaAs doped-channel FETs;IEEE Electron Device Letters;2005-12
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