Gate-modulated transport properties and mechanism for nanowire cross junction based on SnO2 semiconductor-Reference-Cited by-同舟云学术

Gate-modulated transport properties and mechanism for nanowire cross junction based on SnO2 semiconductor

Published:2015-12-07 Issue:23 Volume:107 Page:233503
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Chen Xi¹,Tong Yanhong¹,Wang Guorui¹,Tang Qingxin¹,Liu Yichun¹

Affiliation:

1. Key Laboratory of UV Light Emitting Materials and Technology Under Ministry of Education, Northeast Normal University, Changchun 130024, People's Republic of China

Funder

China Council Scholarship, and Fundamental Research Funds for the Center Universities

Ministry of Science and Technology of China

National Natural Science Foundation of China (NSFC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4937385

Reference17 articles.

1. Nanobelts, Nanowires, and Nanodiskettes of Semiconducting Oxides—From Materials to Nanodevices

2. Large-Scale Hierarchical Organization of Nanowire Arrays for Integrated Nanosystems

3. Controllable fabrication of oriented micro/nanowire arrays of dibenzo-tetrathiafulvalene by a multiple drop-casting method

4. Detection of NO2 down to ppb Levels Using Individual and Multiple In2O3 Nanowire Devices

5. Resistive-Switching Crossbar Memory Based on Ni-NiO Core-Shell Nanowires

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