Epitaxial growth of high-quality Ge films on nanostructured silicon substrates
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2205728
Reference16 articles.
1. Impact of GaAs buffer thickness on electronic quality of GaAs grown on graded Ge/GeSi/Si substrates
2. 2.5 Gbit/s polycrystalline germanium-on-silicon photodetector operating from 1.3 to 1.55 μm
3. Single-junction InGaP/GaAs solar cells grown on Si substrates with SiGe buffer layers
4. Influence of misfit dislocations on the surface morphology of Si1−xGex films
5. Crack formation and thermal stress relaxation of GaAs on Si growth by metalorganic vapor phase epitaxy
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