Comprehensive strain and band gap analysis of PA-MBE grown AlGaN/GaN heterostructures on sapphire with ultra thin buffer-Reference-Cited by-同舟云学术

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Comprehensive strain and band gap analysis of PA-MBE grown AlGaN/GaN heterostructures on sapphire with ultra thin buffer

Published:2014-11 Issue:11 Volume:4 Page:117120
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Mahata Mihir Kumar¹^ORCID,Ghosh Saptarsi¹,Jana Sanjay Kumar¹,Chakraborty Apurba²,Bag Ankush¹,Mukhopadhyay Partha³,Kumar Rahul¹,Biswas Dhrubes²

Affiliation:

1. Advanced Technology Development Center, Indian Institute of Technology, Kharagpur, 721302, India

2. Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology, Kharagpur, 721302, India

3. Rajendra Mishra School of Engineering Entrepreneurship, Indian Institute of Technology, Kharagpur, 721302, India

Funder

Department of Electronics and Information Technology, Ministry of Communications and Information Technology (DeitY)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://scitation.aip.org/deliver/fulltext/aip/journal/adva/4/11/1.4902090.pdf?itemId=/content/aip/journal/adva/4/11/10.1063/1.4902090&mimeType=pdf&containerItemId=content/aip/journal/adva

Reference37 articles.

1. GaN HEMT and MMIC development at Fraunhofer IAF: performance and reliability

2. Crystal growth and characterization of AlGaN/GaN heterostructures prepared on vicinal-cut sapphire (0001) substrates

3. An Al/sub 0.3/Ga/sub 0.7/N/GaN undoped channel heterostructure field effect transistor with F/sub max/ of 107 GHz

4. High-frequency measurements of AlGaN/GaN HEMTs at high temperatures

5. Microwave performance of AlGaN/GaN metal insulator semiconductor field effect transistors on sapphire substrates

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1. Spatially correlated stress-photoluminescence evolution in GaN/AlN multi-quantum wells;Surfaces and Interfaces;2024-05

2. Temperature dependent correlation of Hall effect and optical measurements of electron concentration in degenerate InN thin film;Journal of Vacuum Science & Technology B;2023-08-31

3. Polarization Doping in a GaN-InN System—Ab Initio Simulation;Materials;2023-01-31

4. Polarization doping—Ab initio verification of the concept: Charge conservation and nonlocality;Journal of Applied Physics;2022-08-14

5. Effects of Si doping well beyond the Mott transition limit in GaN epilayers grown by plasma-assisted molecular beam epitaxy;Journal of Physics D: Applied Physics;2021-11-25

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