Out-of-plane electron transport in finite layer MoS2
Author:
Affiliation:
1. Department of Physics, University of Northern Iowa, 215 Begeman Hall, Cedar Falls, Iowa 50614-0150, USA
Funder
National Science Foundation
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.5026397
Reference43 articles.
1. Single-layer MoS2 transistors
2. High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals
3. Atomically ThinMoS2: A New Direct-Gap Semiconductor
4. Direct fabrication of thin layer MoS2 field-effect nanoscale transistors by oxidation scanning probe lithography
5. High mobility and high on/off ratio field-effect transistors based on chemical vapor deposited single-crystal MoS2 grains
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