Systematic investigation of the threshold voltage modulation of AlGaN/GaN Schottky-gate Fin-HEMTs-Reference-Cited by-同舟云学术

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Systematic investigation of the threshold voltage modulation of AlGaN/GaN Schottky-gate Fin-HEMTs

Published:2019-03-07 Issue:9 Volume:125 Page:094502
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Chang Li-Cheng¹,Lin Jhih-Hao²,Dai Cheng-Jia¹,Yang Ming¹,Jiang Yi-Hong¹,Wu Yuh-Renn²^ORCID,Wu Chao-Hsin¹²^ORCID

Affiliation:

1. Graduate Institute of Electronics Engineering, National Taiwan University, No.1, Sec. 4, Roosevelt Rd., Taipei City 10617, Taiwan

2. Graduate Institute of Photonics and Optoelectronics, National Taiwan University, No.1, Sec. 4, Roosevelt Rd., Taipei City 10617, Taiwan

Funder

Ministry of Science and Technology, Taiwan

National Taiwan University

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5085275

Reference38 articles.

1. AlGaN/GaN HEMTs-an overview of device operation and applications

2. GaN-Based RF Power Devices and Amplifiers

3. Performance evaluation of high-power wide band-gap semiconductor rectifiers

4. R. Quay, Gallium Nitride Electronics (Springer, Heidelberg, 2008), p. 28.

5. Spontaneous polarization and piezoelectric constants of III-V nitrides

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of Transverse Geometry of Sidewall Gates on Characteristics of AlGaN/GaN Fin-HEMTs;IEEE Transactions on Electron Devices;2024-03

2. Strain relaxation and self-heating effects of fin AlGaN/GaN HEMTs;Semiconductor Science and Technology;2023-02-16

3. Process improvement of p-GaN HEMTs with a u-GaN etching buffer layer inserted;Applied Physics Express;2022-11-01

4. DC and RF performance of lateral AlGaN/GaN FinFET with ultrathin gate dielectric;Semiconductor Science and Technology;2022-06-23

5. AlGaN/GaN-Based Laterally Gated High-Electron-Mobility Transistors With Optimized Linearity;IEEE Transactions on Electron Devices;2021-03

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