Energetics of hydrogen in GeO2, Ge, and their interfaces
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3610463
Reference29 articles.
1. HfO2 as gate dielectric on Ge: Interfaces and deposition techniques
2. Device structures and carrier transport properties of advanced CMOS using high mobility channels
3. High-k/Ge MOSFETs for future nanoelectronics
4. Chemical kinetics of hydrogen and (111) Si‐SiO2interface defects
5. Interaction of Pb defects at the (111)Si/SiO2 interface with molecular hydrogen: Simultaneous action of passivation and dissociation
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1. Evaluation of atomic hydrogen effect using polycrystalline Ge thin-film transistors;Japanese Journal of Applied Physics;2019-05-31
2. The electronic properties and band-gap discontinuities at the cubic boron nitride/diamond hetero-interface;RSC Advances;2019
3. Interface properties of Al–Al2O3–Ge MIS capacitors and the effect of forming gas annealing;Microelectronic Engineering;2016-06
4. Selective Passivation of GeO2/Ge Interface Defects in Atomic Layer Deposited High-k MOS Structures;ACS Applied Materials & Interfaces;2015-09-09
5. GeO2/Ge structure submitted to annealing in deuterium: Incorporation pathways and associated oxide modifications;Applied Physics Letters;2014-10-06
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