Raman spectroscopic characterization of KrF‐laser‐irradiated silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.351593
Reference16 articles.
1. The Raman microprobe: A quantitative analytical tool to characterize laser-processed semiconductors
2. Anharmonic effects in light scattering due to optical phonons in silicon
3. Temperature Dependence of Raman Scattering in Silicon
4. Comment on ‘‘Raman scattering with nanosecond resolution during pulsed laser annealing of silicon’’ [Appl. Phys. Lett.41, 700 (1982)]
5. Stress Effects on Raman Measurements of Pulsed Laser Annealed Silicon
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1. Adjustable Fragmentation in Laser Desorption/Ionization from Laser-Induced Silicon Microcolumn Arrays;Analytical Chemistry;2006-07-13
2. Raman Spectroscopy Study of Pulsed Laser Induced Structural Transformations in Amorphous Ge Films;MRS Proceedings;1995
3. Laser Melting and Recrystallization of Bulk Si by Nanosecond UV Laser Pulses;MRS Proceedings;1995
4. Raman investigation of porous silicon surface during cw-laser irradiating;Journal of Electron Spectroscopy and Related Phenomena;1993-12
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