Defect structure of SiNx:H films and its evolution with annealing temperature
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1305548
Reference15 articles.
1. Making silicon nitride film a viable gate dielectric
2. Metal‐insulator‐semiconductor solar cells with silicon oxynitride tunnel insulator by using rapid thermal processing
3. Effects of oxygen content and oxide layer thickness on interface state densities for metal‐oxynitride‐oxide‐silicon devices
4. Failure phenomena due to hydrogen migration in amorphous a-SiNx:H films
5. Nature of the dominant deep trap in amorphous silicon nitride
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