Observation of novel in-gap states on alkali metal dosed Ti2O3 film

Author:

Ran Pengxu12ORCID,Lin Bing23ORCID,Hong Caiyun23ORCID,Wang Baokai24ORCID,Xie Xiaopeng12ORCID,Jiang Congying23ORCID,Tanaka K.5ORCID,He Rui-Hua2ORCID

Affiliation:

1. Department of Physics, Zhejiang University 1 , Hangzhou 310027, China

2. Research Center for Industries of the Future & Key Laboratory for Quantum Materials of Zhejiang Province, Department of Physics, Westlake University 2 , Hangzhou, Zhejiang 310024, China

3. Department of Physics, Fudan University 3 , Shanghai 200433, China

4. Zhejiang Institute of Photoelectronics, Zhejiang Normal University 4 , Jinhua, Zhejiang 321004, China

5. UVSOR Synchrotron Facility, Institute for Molecular Science 5 , Okazaki, Japan

Abstract

Alkali metal dosing has nowadays been extensively used in angle-resolved photoemission spectroscopy (ARPES) for the in situ surface electron doping of materials to provide access to the unoccupied states. This technique also gives rise to nontrivial physical phenomena, such as the appearance of quantum well states and effects due to alkali metal intercalation. Here, we uncovered a previously unobserved type of electronic behavior induced by alkali metal dosing. By employing ARPES to study the evolution of the electronic structure of the Ti2O3 thin film upon rubidium (Rb) dosing, we found that the electron chemical potential of the system remains unchanged throughout the process. Interestingly, a series of electron-like band dispersions first appear with Rb dosing. A further increase in the Rb dosage leads to the eventual disappearance of the electron-like bands and the emergence of a set of hole-like bands. Our finding enriches the phenomenology brought about by alkali metal surface dosing, suggesting a novel functionality of this popular surface doping technique.

Funder

National key R&D Program of China

National Natural Science Foundation of China

Publisher

AIP Publishing

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