Measurements of alloy composition and strain in thin GexSi1−xlayers
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.356554
Reference18 articles.
1. Growth temperature dependence of interfacial abruptness in Si/Ge heteroepitaxy studied by Raman spectroscopy and medium energy ion scattering
2. Theoretical calculations of heterojunction discontinuities in the Si/Ge system
3. High electron mobility in modulation‐doped Si/SiGe
4. Raman scattering analysis of relaxed GexSi1−xalloy layers
5. Extremely high electron mobility in Si/GexSi1−xstructures grown by molecular beam epitaxy
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