Room temperature memristive switching in nano-patterned LaAlO3/SrTiO3 wires with laterally defined gates-Reference-Cited by-同舟云学术

Room temperature memristive switching in nano-patterned LaAlO3/SrTiO3 wires with laterally defined gates

Published:2021-04-12 Issue:15 Volume:118 Page:153502
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Miller K.¹^ORCID,Hartmann F.¹,Leikert B.²^ORCID,Kuhn S.¹,Gabel J.²^ORCID,Sing M.²^ORCID,Claessen R.²,Höfling S.¹

Affiliation:

1. Technische Physik, Physikalisches Institut and Würzburg‐Dresden Cluster of Excellence ct.qmat, Am Hubland, D-97074 Würzburg, Germany

2. Experimentelle Physik 4, Physikalisches Institut and Würzburg-Dresden Cluster of Excellence ct.qmat, Universität Würzburg, D-97074 Würzburg, Germany

Funder

Cluster of Excellence

SFB 1170

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0037416

Reference36 articles.

1. Memristor-The missing circuit element

2. The missing memristor found

3. The Missing Memristor has Not been Found

4. Resistive Random Access Memory (ReRAM) Based on Metal Oxides

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Scalable and highly tunable conductive oxide interfaces;APL Materials;2023-11-01

2. Interface band engineering in LaAlO3/SrTiO3 heterostructures;Physical Review B;2023-07-17

3. The Ubiquitous Memristive Response in Solids;IEEE Transactions on Electron Devices;2022-09

4. Temperature, detriment, or advantage for memory emergence: The case of ZnO;The Journal of Chemical Physics;2022-07-07

5. Controlling Memristance and Negative Differential Resistance in Point‐Contacted Metal–Oxides–Metal Heterojunctions: Role of Oxygen Vacancy Electromigration and Electron Hopping;Advanced Intelligent Systems;2022-04-08