Study of the direct‐indirect band‐gap transition in GaAs/AlAs short‐period superlattices using photocurrent spectroscopy
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.342621
Reference8 articles.
1. Transient photovoltaic effect in InAs-GaSb superlattices
2. Optical evidence of the direct-to-indirect-gap transition in GaAs-AlAs short-period superlattices
3. Superlattice band structure in the envelope-function approximation
4. Newk⋅ptheory for GaAs/Ga1−xA1xAs-type quantum wells
Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Band-gap unification of partially Si-substituted single-wall carbon nanotubes;Physical Review B;2006-12-13
2. Confined electron states in ultrathin AlAs single quantum wells under pressure;Physical Review B;1992-05-15
3. Improvement of the carrier confinement by double‐barrier GaAs/AlAs/(Al,Ga)As quantum well structures;Applied Physics Letters;1991-05-13
4. Observation of the type I–type II crossover in GaAs/AlAs short‐period superlattices by optical spin orientation;Journal of Applied Physics;1991-02-15
5. Physics of GaAs/AlAs Superlattices;Acta Physica Polonica A;1991-01
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