Effect of scattering by native defects on electron mobility in modulation‐doped heterostructures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.105150
Reference18 articles.
1. Electron mobilities in modulation‐doped semiconductor heterojunction superlattices
2. High mobilities in AlxGa1−xAs‐GaAs heterojuntions
3. Electron mobilities exceeding 107cm2/V s in modulation‐doped GaAs
4. Temperature dependence of the electron mobility in GaAs‐GaAlAs heterostructures
5. Temperature dependence of the electron mobility in GaAs‐GaAlAs heterostructures
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Fermi level effects on Mn incorporation in modulation-doped ferromagnetic III1−xMnxV heterostructures;Journal of Physics: Condensed Matter;2004-11-20
2. Electronic effects determining the formation of ferromagnetic III1−xMnxV alloys during epitaxial growth;Physica E: Low-dimensional Systems and Nanostructures;2004-11
3. Direct evidence of the Fermi-energy-dependent formation of Mn interstitials in modulation-doped Ga1−yAlyAs/Ga1−xMnxAs/Ga1−yAlyAs heterostructures;Applied Physics Letters;2004-05-24
4. Pressure Ratio (PAs/PGa) Dependence on Low Temperature GaAs Buffer Layers Grown by MBE;MRS Proceedings;1993
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