Some Thin‐Film Properties of a New Ferroelectric Composition
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1657999
Reference11 articles.
1. Utilization of the t* Partial Switching Properties of Ferroelectrics in Memory Devices
2. A ferroelectric field effect device
3. Electrical Properties of Niobium‐Doped Ferroelectric Pb(Zr, Sn, Ti)O3 Ceramics
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