Effects of Al2O3 gate insulator on the instability of amorphous indium-gallium zinc oxide thin film transistors
Author:
Affiliation:
1. Department of Electronic Engineering, Chungnam National University, Daejeon, Korea
Funder
Ministry of Science, ICT and Future Planning
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.5043340
Reference25 articles.
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3. 42.2: World's Largest (15-inch) XGA AMLCD Panel Using IGZO Oxide TFT
4. Bias-stress-induced stretched-exponential time dependence of threshold voltage shift in InGaZnO thin film transistors
5. Bias stress stability of indium gallium zinc oxide channel based transparent thin film transistors
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