Charge transfer and mobility enhancement at CdO/SnTe heterointerfaces
Author:
Affiliation:
1. Institute for Solid State Physics, The University of Tokyo, 5-1-5 Kashiwanoha, Kashiwa, Chiba 277-8581, Japan
2. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
Funder
Lawrence Berkely National Laboratory (Berkeley Lab)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4896912
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1. Fundamentals of Semiconductors
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4. A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions
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