Selective area growth of cubic gallium nitride on silicon (001) and 3C-silicon carbide (001)
Author:
Affiliation:
1. University of Paderborn, Department of Physics, Warburger Straße 100, 33098 Paderborn, Germany
2. Otto-von-Guericke Universität Magdeburg, Institut für Physik, Universitätsplatz 2, 39106 Magdeburg, Germany
Funder
Deutsche Forschungsgemeinschaft
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0053865
Reference16 articles.
1. Cubic GaN/AlGaN HEMTs on 3C-SiC Substrate for Normally-Off Operation
2. Room temperature green light emission from nonpolar cubic InGaN∕GaN multi-quantum-wells
3. Maximizing cubic phase gallium nitride surface coverage on nano-patterned silicon (100)
4. Cubic Phase GaN on Nano-grooved Si (100) via Maskless Selective Area Epitaxy
5. R. Kemper, “Cubic GaN on pre-patterned 3C-SiC/Si (001) substrates,” Ph.D. thesis, University of Paderborn, 2014.
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